西澳大学招聘计算机与电气工程博士后

Job Title: Super Science Fellowship - Advanced First-Principle Physics Modelling of Carrier Transport in Nanostructured Devices and Materials
Job Number: 4009482 (Ref.#. SSF3)
Date Posted: 06/21/2011
Application Deadline: 8/25/2011

Job Description

ARC Super Science Fellowship position
Location: The University of Western Australia, Perth, Western Australia

Reference Number: SSF3

DESCRIPTION:
Microelectronics Research Group (MRG) at The University of Western Australia is a long established and internationally renowned research centre conducting research in the fields of HgCdTe based infrared detectors and semiconductor transport characterisation. We are inviting applications for the ARC Super Science Fellowship (SSF) in the field of:

Advanced First-Principle Physics Modelling of Carrier Transport in Nanostructured Devices and Materials

The successful candidates should have a Ph.D. in relevant fields and demonstrated evidence of success in scholarly or industry research. All candidates must meet the requirements of the Early Career Researcher, as defined by the Australian Research Council (less than 5 years since PhD). Fluency in English is required.
Salaries: A$78,647 – A$84,545
The applications shall be written in English and include the following items:

1. A cover letter including position’s reference number, residential status and short description of qualifications for the position
2. Separate document addressing all items on the SELECTION CRITERIA (attached below)
3. Copies of education certificates
4. Curriculum Vitae
5. Name and contact details of two referees

PLEASE NOTE! Only complete applications will be considered.

The applications shall be sent electronically in doc or pdf format to MRG Secretary Sabine Bettssabine.betts@uwa.edu.au

APPLICATION DEADLINE: 25 August 2011

JOB DESCRIPTION
This position is focused on the development, and validation, of computationally efficient numerical models that correlate measured material properties to first-principle electron transport physics. The complex physics of advanced nanostructured devices mandates the development of advanced algorithms that may require the use of Monte Carlo methods coupled self-consistently with Schrodinger solvers, as quantum effects cannot be avoided in the nano-scale realm. However, the work will not be solely theoretical and computational in nature, as it will require integration with the development of new characterisation methods. The primary aim of this work, and the resulting models, is to assess the fundamental limits in present day materials and device designs, and to explore novel nanostructures and device paradigms.
Additionally, the work will require not only modelling and simulation but the development of familiarity with characterisation methods (including structural characterisation), and dynamic interaction with the work of other group members undertaking electronic transport characterisation. Furthermore, the modelling work will seek to develop and refine existing models that describe measured transport parameters in terms of physical parameters and mechanisms. It is anticipated that the coherent integration of the modelling and characterisation will not only lead to great insight into the fundamental physical mechanisms of electronic transport in nanostructured devices, but will also lead to the development of new characterisation methods and test-structures.
The work in this area will be carried out in collaboration with the following external institutions:
• ANU – Simulation of devices on III-V based superlattices and nanostructures.
• UNM (USA) – Simulation of devices based on InAs/GaSb type-II strained superlattices.
• University of Granada (Spain) – Custom-built and verified modelling and simulation tools with models for SOI, SOI/SiGe, III-Nitrides materials and devices.
• Politecnico di Torino (Italy) – Custom built and verified modelling and simulation tools with models for HgCdTe, and III-nitrides.
• Boston University (USA) – Very advanced custom built and verified Monte Carlo based modelling and simulation tools with models for III-Nitrides and recently presented models for InAs/GaSb quantum-well and superlattice nanostructures (demonstrated at the 2009 II-VI workshop, Chicago, USA)

SELECTION CRITERIA
Essential
1. PhD in semiconductor physics, electronic engineering or equivalent
2. Experience in the filed of modelling of semiconductor materials and structures
3. Sound knowledge of calculation methods of band structure and transport parameters (carrier concentration, mobility, lifetime).
4. Sound knowledge of available modelling software.
5. Sound knowledge of characterisation methods for semiconductor materials
6. Strong publication record
7. Good English communication skills
Desirable
1. Familiarity with device modelling

Contact: Sabine Betts
School of Electrical, Electronic and Computer Engineering
The University of Western Australia
35 Stirling Highway
Crawley, Western Australia 6009
Australia
Phone: +61 8 6488 3801
Fax: +61 8 6488 1095
Email: sabine.bettsuwa.edu.au
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